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Semi. Global Sourcing Provider

As an innovative supplier, we are committed to providing high-quality, cost-saving semiconductor equipment, materials and consumable through collaboration with customers and global partners.

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Wafer (SiC & GaN)

Mobile and Consumer

Automotive and Mobility

Telecom and Infrastructure

Industrial

Defense and Aerospace

Medical

SiC (Silicon Carbide) Wafer

Ingot Defect Key Parameter

Dislocation
EPD TED
TSD BPD
MPD
Micro Pipe Density
<0.2/cm2

GaN (Gallium Nitride) Wafer

Operationg Frequency (Hz)

Flatness Key Parameter (LTV/TTV/Bow/Warp)

Power GaN / RF GaN

Wafer (Silicon, Glass)

Customized Semiconductor
Wafer Solution Provider

Process Wafer

12inch High Grade Wafer

DRAM, Nand Flash,CIS
Defect Free, Super Flat Wafer

Customized Wafer

Wafer Reclaim Service

Si, SiC, Epitaxial Wafer grinding

1. Grinding

2. Cleaning

3. Inspection

Glass Wafer (8”, 12”)

Specification
THK Bow/Warp
Suface Ra
Material
Fused Silica (4”,6”,8”,12”)
High Index, EXG (8”,12”)

High Precision (Eagle XG) , TGV, MEMS, AR Glass

Glass Wafer (Customized)

Structured Wafer

Patterned Wafer

SiC Wafer — Ingot Defect Key Parameter Level

SiC Wafer (150mm / 200mm)

Ingot Defect Key Parameter Level

MPD &TSD : Near free.   BPD : Good level.

150mm (6") 200mm (8")
MPD(<0.06) TED (1,238) MPD(<0.01) TED (1,201)
TSD (<3) BPD(<190) TSD (<3) BPD(<100)

8 Inch SiC Wafer Dislocation Improvement

Actual BPD <100 (near Seed)

SiC Wafer (300mm)

Ingot Defect Key Parameter Level

TSD Density = 402 cm-2
Measured by TAS
TED Density = 1937 cm-2
Measured by TAS

Morphology Level

TTV 5μm / LTV 2μm

Customized Glass Solution Provider

Glass Wafer (TTV <0.2um)

Glass Wafer (8", 12")

High Precision (Eagle XG) , TGV, MEMS, AR Glass

High surface flatness (TTV <0.2um)

grinding and polishing consumables

TGV (Interposer)

TSV(Si) vs TGV (Glass)